Infineon IPB120P04P404ATMA2 OptiMOS Power MOSFET for High-Efficiency Power Conversion Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the forefront of this innovation is Infineon Technologies' IPB120P04P404ATMA2, a member of the esteemed OptiMOS™ Power MOSFET family, engineered specifically to meet the rigorous requirements of contemporary power conversion systems.

This device is a N-channel MOSFET built on Infineon's advanced trench technology, which is the cornerstone of its exceptional performance. With a maximum drain-source voltage (VDS) of 40 V and a continuous drain current (ID) of 120 A, it is an ideal candidate for a wide range of high-current applications. Its most defining feature is its extremely low typical on-state resistance (RDS(on)) of just 0.4 mΩ at 10 V. This ultra-low RDS(on) is critical as it directly translates to minimized conduction losses, allowing for more efficient power transfer and significantly reducing heat generation. This is paramount in applications where thermal management is a key design challenge.

The benefits of the IPB120P04P404ATMA2 extend beyond its raw switching capabilities. The low gate charge (QG) and figure-of-merit (FOM) ensure fast switching speeds, which are essential for high-frequency operation. This capability enables designers to shrink the size of passive components like inductors and capacitors, leading to more compact and lightweight power supplies. Furthermore, the MOSFET boasts an exceptional body diode robustness, enhancing its reliability in hard-switching topologies such as synchronous rectification in switch-mode power supplies (SMPS).

Typical applications where this MOSFET excels include:

Synchronous Rectification in server and data center SMPS.

High-Current DC-DC Converters for telecommunications and computing infrastructure.

Motor Control and Drives in industrial automation and robotics.

Battery Management Systems (BMS) and protection circuits in energy storage and electric vehicles.

The device is offered in the Infineon’s proprietary SuperSO8 package (PG-TSON-8), which provides an excellent balance between a small footprint and superior thermal and electrical performance. This package is designed for low parasitic inductance and improved cooling, making it suitable for automated, high-volume assembly processes.

ICGOOODFIND: The Infineon IPB120P04P404ATMA2 stands out as a superior solution for designers pushing the limits of efficiency and power density. Its industry-leading combination of ultra-low RDS(on), high current handling, and fast switching characteristics makes it an indispensable component for the next generation of high-efficiency power conversion applications.

Keywords: OptiMOS, Low RDS(on), High-Efficiency, Power Conversion, Synchronous Rectification.