High-Performance Power MOSFET IPP60R385CP: Advanced 650V CoolMOS™ CP Technology for Efficient Switching Applications

The IPP60R385CP stands as a prime example of advanced power semiconductor engineering, leveraging Infineon’s groundbreaking CoolMOS™ CP technology to deliver exceptional performance in high-voltage switching applications. Designed to meet the growing demands of modern power electronics, this 650V MOSFET combines ultra-low effective dynamic losses with high robustness, making it an ideal choice for applications such as switched-mode power supplies (SMPS), industrial motor drives, photovoltaic inverters, and EV charging systems.

A key highlight of the IPP60R385CP is its remarkably low on-state resistance (\(R_{DS(on)}\)) of just 385 mΩ, significantly reducing conduction losses and improving overall system efficiency. This is complemented by the revolutionary superjunction structure intrinsic to the CoolMOS™ CP series, which minimizes switching losses even at high frequencies. The result is a device that supports higher power density designs, allowing engineers to develop more compact and energy-efficient systems without compromising thermal performance or reliability.

Moreover, the MOSFET features fast switching capabilities and excellent body diode robustness, which enhance its usability in hard-switching and resonant topologies like LLC converters. Its low gate charge (\(Q_g\)) and output capacitance (\(C_{oss}\)) further contribute to reduced drive requirements and lower turn-on losses, enabling smoother operation and better electromagnetic compatibility (EMC).

The IPP60R385CP also incorporates strong avalanche ruggedness and high repetitive avalanche endurance, providing an added layer of protection in demanding environments. The device is offered in a TO-220 FullPAK package, which ensures improved creepage distance and isolation characteristics—critical for safety-rated applications.

ICGOOODFIND:

The IPP60R385CP exemplifies how CoolMOS™ CP technology continues to push the boundaries of power MOSFET performance, offering engineers a reliable, high-efficiency solution for next-generation power conversion systems.

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Keywords:

Power MOSFET, CoolMOS™ CP, Switching Efficiency, 650V Superjunction, Low \(R_{DS(on)}\)