HMC460LC5TR-R5: A High-Performance GaAs pHEMT MMIC Low Noise Amplifier for 24 - 40 GHz Applications

Release date:2025-09-04 Number of clicks:114

**HMC460LC5TR-R5: A High-Performance GaAs pHEMT MMIC Low Noise Amplifier for 24 - 40 GHz Applications**

The relentless drive for higher data rates and greater network capacity continues to push the operational boundaries of wireless systems into the millimeter-wave (mmWave) frequency spectrum. Applications such as **5G infrastructure**, point-to-point radio, satellite communications, and advanced radar systems demand high-performance components that offer exceptional signal integrity from the outset. The **HMC460LC5TR-R5**, a GaAs pHEMT Monolithic Microwave Integrated Circuit (MMIC) Low Noise Amplifier (LNA), is engineered specifically to meet these demanding requirements in the critical **24 to 40 GHz Ka-band and upper Ku-band**.

At the heart of any receiver chain, the LNA's primary role is to amplify extremely weak signals while adding the absolute minimum amount of noise. The HMC460LC5TR-R5 excels in this regard, boasting an outstanding **noise figure of just 2.0 dB** across a significant portion of its bandwidth. This low noise figure is crucial for maintaining the overall system sensitivity, ensuring that even the faintest signals are amplified sufficiently for downstream processing without being buried in the amplifier's own noise.

Complementing its low-noise performance, this MMIC LNA provides a substantial **gain of 18 dB**, which helps to overpower the noise contribution from subsequent stages in the receiver. The amplifier also demonstrates excellent linearity, with an output IP3 (OIP3) of +23 dBm, allowing it to handle strong interfering signals without generating significant intermodulation distortion that could degrade signal quality.

The device is fabricated using a high-reliability **0.15 µm GaAs pHEMT process**, which is renowned for its superior high-frequency performance and low-noise characteristics. This monolithic construction ensures robust performance and high repeatability. Furthermore, the amplifier is housed in a leadless, RoHS-compliant 5x5 mm LCC-32 surface-mount package, making it suitable for high-volume, automated PCB assembly. Its design incorporates on-chip bias networks and requires only a single positive supply voltage, alongside external DC blocking capacitors, simplifying integration into larger systems.

**ICGOOODFIND:** The HMC460LC5TR-R5 stands out as a premier solution for designers needing robust and reliable gain at mmWave frequencies. Its exceptional combination of **low noise figure, high gain, and compact form factor** makes it an indispensable component for advancing next-generation communication and sensing systems operating in the 24-40 GHz range.

**Keywords:** **Millimeter-wave (mmWave)**, **Low Noise Amplifier (LNA)**, **GaAs pHEMT**, **Noise Figure**, **5G Infrastructure**.

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