Infineon IPT60R050G7XTMA1: A 600V CoolMOS G7 Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge, the Infineon IPT60R050G7XTMA1 stands out as a premier 600V superjunction MOSFET from the groundbreaking CoolMOS™ G7 family. This device is engineered to set new benchmarks in performance for a wide array of high-efficiency applications, from server and telecom SMPS to industrial motor drives and renewable energy systems.

At the core of its innovation is a significantly reduced figure-of-merit (RDS(on) x Qg), a key indicator of switching performance. With an ultra-low on-state resistance of just 50 mΩ maximum, the transistor minimizes conduction losses. Concurrently, its exceptionally low gate charge (Qg) and output charge (Qoss) ensure rapid switching transitions, drastically reducing switching losses. This synergistic optimization allows systems to operate at higher switching frequencies without the typical efficiency penalty, enabling the use of smaller passive components like magnetics and capacitors to achieve greater power density.

Beyond raw performance metrics, the CoolMOS™ G7 technology incorporates advanced features that enhance real-world reliability. The integrated fast body diode improves hard commutation ruggedness, a critical factor in circuits like power factor correction (PFC) stages. Furthermore, its high dv/dt capability and superior noise immunity contribute to more stable and robust operation, simplifying design-in and mitigating potential failure modes.

The part is offered in the TOLL (TO-Leadless) package, which is a major advantage for space-constrained designs. This package features an extremely low profile and a small footprint while providing superior thermal performance due to its large exposed cooling pad. This allows designers to manage heat more effectively, pushing the limits of power output in compact form factors.

ICGOOODFIND: The Infineon IPT60R050G7XTMA1 is a state-of-the-art power MOSFET that exemplifies the progress in semiconductor technology. Its masterful balance of ultra-low conduction and switching losses makes it an exceptional choice for designers aiming to maximize efficiency and power density in next-generation power conversion systems.

Keywords: CoolMOS G7, High-Efficiency, Ultra-Low RDS(on), TOLL Package, Fast Switching