Infineon IPW60R041P6FKSA1 CoolMOS™ P6 Power MOSFET: Datasheet, Application Circuit, and Features

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching devices. Addressing this need, Infineon Technologies introduces the IPW60R041P6FKSA1, a state-of-the-art CoolMOS™ P6 Power MOSFET that sets a new benchmark in performance for high-power applications. This device exemplifies the pinnacle of superjunction (SJ) technology, offering an exceptional balance of low switching losses and superior conduction behavior.

Key Features and Benefits

The IPW60R041P6FKSA1 is engineered to deliver maximum efficiency. Its standout characteristic is an ultra-low typical on-state resistance (R DS(on)) of just 41 mΩ at a gate-source voltage of 10 V. This directly translates to minimized conduction losses, leading to cooler operation and higher overall system efficiency. Building upon the success of its predecessors, the CoolMOS™ P6 series incorporates revolutionary features:

Adjustable Gate Switching Speed: A key innovation is the integrated gate resistor (R G,int), which allows designers to easily tailor the switching speed (dv/dt) by simply adding an external resistor. This provides unparalleled flexibility in optimizing the trade-off between electromagnetic interference (EMI) and switching losses, simplifying PCB layout and reducing component count.

Exceptional Body Diode Robustness: The device boasts a highly rugged body diode with excellent reverse recovery characteristics. This is critical for applications like power factor correction (PFC) and motor drive bridges, where the body diode conducts during dead-time, ensuring reliable and robust operation.

Superior Switching Performance: The combination of low gate charge (Q G) and low output capacitance (C OSS) ensures extremely fast switching and low dynamic losses, making it ideal for high-frequency SMPS designs.

Primary Applications

The IPW60R041P6FKSA1 is designed for high-power and high-frequency switch-mode power supplies (SMPS). Its 600 V voltage rating and robust performance make it a perfect fit for:

Server, telecom, and industrial SMPS

Power Factor Correction (PFC) stages (both boost and totem-pole configurations)

LLC resonant converters

Solar inverters and UPS systems

Motor drives and lighting controls

Application Circuit Highlight: PFC Stage

A typical application circuit for this MOSFET is in a continuous conduction mode (CCM) boost PFC converter. In this circuit, the IPW60R041P6FKSA1 serves as the main switch. Its low R DS(on) minimizes conduction losses during the on-time, while its fast switching speed reduces turn-on and turn-off losses. The integrated gate resistor simplifies the gate drive network, allowing for precise control of the switching edge to manage EMI. The ruggedness of its body diode provides essential protection during the dead-time periods of the switching cycle, ensuring long-term reliability in this demanding continuous-operation circuit.

Datasheet Overview

The datasheet for the IPW60R041P6FKSA1 is an essential resource for any design engineer. It provides comprehensive information including:

Absolute Maximum Ratings: Defining the operational boundaries for voltage, current, and temperature.

Electrical Characteristics: Detailed tables and graphs for R DS(on), capacitance values, gate charge, and switching times.

Switching Characteristics: Key waveforms and test circuits to simulate performance.

Body Diode Characteristics: Specifying reverse recovery charge (Q rr) and time (t rr).

Package Information: Mechanical drawings and thermal characteristics of the TO-247 package.

ICGOOODFIND

ICGOOODFIND: The Infineon IPW60R041P6FKSA1 CoolMOS™ P6 is a top-tier solution for engineers pushing the limits of power supply design. Its blend of ultra-low conduction resistance, the unique adjustable switching speed feature, and a rugged body diode offers an unmatched combination of efficiency, design flexibility, and robustness for high-performance 600 V applications.

Keywords:

1. CoolMOS P6

2. Power MOSFET

3. Low RDS(on)

4. Switching Losses

5. Application Circuit